A silicon light emitting devices in standard CMOS technology

A silicon light emitting device is designed and simulated. It is fabricated in 0.6 mum standard CMOS technology. The device can give more than 1 muW optical power of visible light under reverse breakdown. The device can be turned on at a bias of 0.88 V and work in a large range of voltage: 1.0-6.0 V The external electrical-optical conversion efficiency is more than 10(-6). The optical spectrum of the device is between 540-650 nm, which have a clear peak near 580 nm. The emission mechanism can be explained by a hot carrier direct recombination model.

A nonmonotonic dependence of standard rate constant on reorganization energy for heterogeneous electron transfer processes on electrode surface

In the present work a nonmonotonic dependence of standard rate constant (k(0)) on reorganization energy (lambda) was discovered qualitatively from electron transfer (Marcus-Hush-Levich) theory for heterogeneous electron transfer processes on electrode surface. It was found that the nonmonotonic dependence of k(0) on lambda is another result, besides the disappearance of the famous Marcus inverted region, coming from the continuum of electronic states in electrode: with the increase of lambda, the states for both Process I and Process II ET processes all vary from nonadiabatic to adiabatic state continuously, and the lambda dependence of k(0) for Process I is monotonic thoroughly, while for Process II on electrode surface the lambda dependence of k(0) could show a nonmonotonicity.